Title

Study Of Electrical Stress Effect On Sige Hbt Low-Noise Amplifier Performance By Simulation

Keywords

HBT; Hot-carriers; Low-noise amplifier; S-parameters; SiGe; VBIC model

Abstract

This paper investigates the hot-carrier-induced performance degradation in a cascode low-noise amplifier using SiGe heterojunction bipolar transistors. Changes in device characteristics due to accelerated hot-carrier stress are examined experimentally. The vertical bipolar inter-company (VBIC) model parameters extracted from measured device data before and after stress are used in Cadence SpectreRF simulation to evaluate the circuit performance degradation. © 2006 IEEE.

Publication Date

12-1-2006

Publication Title

IEEE Transactions on Device and Materials Reliability

Volume

6

Issue

4

Number of Pages

550-554

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1109/TDMR.2006.887464

Socpus ID

33845513743 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/33845513743

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