Title
High Yield Assembly And Electron Transport Investigation Of Semiconducting-Rich Local-Gated Single-Walled Carbon Nanotube Field Effect Transistors
Abstract
We report the fabrication and electron transport investigation of individual local-gated single-walled carbon nanotube field effect transistors (SWNT-FET) with high yield using a semiconducting-rich carbon nanotube solution. The individual semiconducting nanotubes were assembled at the selected position of the circuit via dielectrophoresis. Detailed electron transport investigations on 70 devices show that 99% display good FET behavior, with an average threshold voltage of 1V, subthreshold swing as low as 140mV/dec, and on/off current ratio as high as 8 × 105. The high yield directed assembly of local-gated SWNT-FET will facilitate large scale fabrication of CMOS (complementary metal-oxide-semiconductor) compatible nanoelectronic devices. © IOP Publishing Ltd.
Publication Date
10-14-2011
Publication Title
Nanotechnology
Volume
22
Issue
41
Number of Pages
-
Document Type
Article
Personal Identifier
scopus
DOI Link
https://doi.org/10.1088/0957-4484/22/41/415201
Copyright Status
Unknown
Socpus ID
80053229240 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/80053229240
STARS Citation
Kormondy, Kristy J.; Stokes, Paul; and Khondaker, Saiful I., "High Yield Assembly And Electron Transport Investigation Of Semiconducting-Rich Local-Gated Single-Walled Carbon Nanotube Field Effect Transistors" (2011). Scopus Export 2010-2014. 2977.
https://stars.library.ucf.edu/scopus2010/2977