Keywords

DRO, Dielectric Resonator, Oscillator, K-Band, Embedded Oscillator, High Q, Low Phase Noise, Microwave, RF

Abstract

K-Band (18 to 26 GHz) dielectric resonator oscillators are typically used as a local oscillator in most K-Band digital transmitter/receiver topologies. Traditionally, the oscillator itself is made up of an active device, a dielectric resonator termination network, and a passive load matching network. The termination network embodies a cylindrical high permittivity dielectric resonator that is coupled on the same plane as a current carrying transmission line. This configuration provides an adequate resonance needed for oscillation but has some limitations. In order to provide a high Q resonance the entire oscillator is placed in a metal box to prevent radiation losses. This increases the overall size of the device and makes it difficult to integrate in smaller transceiver topologies. Secondly, a tuning screw is required to help excite the dominant mode of the resonator to achieve the high Q response. This can cause problems in precision due to the mechanical jitter of the screw inherent in mobile devices. By embedding this resonator inside the substrate it is possible to realize a very high Q resonance at a desired frequency and remove the need for a metal cavity and tuning screw. An additional advantage can be seen in terms of overall size reduction of the oscillator circuit. To demonstrate the feasibility of utilizing a dielectric resonator embedded within a substrate, a K-Band oscillator proof of concept has been designed, fabricated, and tested. The oscillator is comprised of a low noise active transistor device, an embedded k-band dielectric resonator and a passive transmission line load network. All elements within the oscillator are optimized to produce a steady oscillation near 20 GHz. Preliminary investigations of a microstrip resonator S-band (2-3 GHz) oscillator are first discussed. Secondly, various challenges in design and fabrication are discussed. Thereafter, simulated and measured results of the embedded DRO structure are presented. Emphasis is placed on output oscillation power and low phase noise. With further development, the entire oscillator can be embedded within the substrate leaving only the active device on the surface. This allows for a considerable reduction in material cost and simple integration with miniaturized digital transmitter/receiver devices.

Notes

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Graduation Date

2008

Advisor

Gong, Xun

Degree

Master of Science in Electrical Engineering (M.S.E.E.)

College

College of Engineering and Computer Science

Department

Electrical Engineering and Computer Science

Degree Program

Electrical Engineering

Format

application/pdf

Identifier

CFE0002451

URL

http://purl.fcla.edu/fcla/etd/CFE0002451

Language

English

Release Date

December 2008

Length of Campus-only Access

None

Access Status

Masters Thesis (Open Access)

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