Measurement and testing of IGBTs under high heat flux
Keywords
Cooling, Heat -- Transmission, Insulated gate bipolar transistors
Abstract
High current devices such as IGBTs (Insulated Gate Bipolar Transistors) generate a great deal of heat during the application of high current levels. This issue is exacerbated when IGBTs are used as high-speed switching devices in power systems where switching takes place at high voltage and high current levels. Cooling of these devices is an integral part of electrical designs that use them. Heat generated by these devices must often use water-cooling in order to keep cool and thus, keep them operating. Excess heat within these devices is one of the most common causes of their failure. Measuring the heat flux inside of an IGBT is a fairly simple thing to do. Measuring its internal temperature is not. The internal temperature of IGBTs is not an easily quantifiable value during normal operation. Thermocouples can be placed externally on an IGBT, but these will not give the temperature inside of the device. It is known that the internal temperature of these devices causes variations in the voltage drop across the emitter and collector leads ,when constant current is applied. An application to which this understanding can be applied is the measurement of the internal device temperature of IGBTs during abnormal operation, that is, to exceed these devices' current range, while keeping them within their temperature operating ranges. In such a case, where inputs and outputs change dynamically, a means for measuring the internal device temperature dynamically is essential. In this investigation, the methodology was to apply high current levels to the DUT (Device Under Test), an IGBT and, using the advanced cooling technology known as "spray cooling," remove the excess heat with the intent of showing the feasibility of the new cooling technology. This would show that the DUT current range could be exceeded, so long as its temperature range was not. In order to measure the internal device temperature, a known value of current would be applied momentarily between periods of high current application. The period of measurement would be very short in relation to the period of high heat flux.
Notes
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Graduation Date
2004
Degree
Master of Science (M.S.)
College
College of Engineering
Format
Pages
154 p.
Language
English
Length of Campus-only Access
None
Access Status
Masters Thesis (Open Access)
Identifier
DP0029489
Subjects
Dissertations, Academic -- Engineering; Engineering -- Dissertations, Academic
STARS Citation
Mertens, Robert G., "Measurement and testing of IGBTs under high heat flux" (2004). Retrospective Theses and Dissertations. 4645.
https://stars.library.ucf.edu/rtd/4645